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高带宽存储器

微米HBM3E

微米's 8-high and 12-high HBM3E memory further fuel AI innovation at 30% lower power consumption than competition. 微米 8-high 24GB will ship with NVIDIA H200 tensor Core GPUs in CQ2, 2024. 微米 12-high 36GB samples are now available.

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扩张

支持$6.1B CHIPS grant, 微米 plans to invest $50 billion in gross capex for U.S. domestic leading-edge memory manufacturing through 2030

These grants will support construction of one leading-edge memory manufacturing fab in Boise, Idaho and the construction of two leading-edge memory fabs in Clay, 纽约. This is the first step in 微米's vision for a potential investment of up to $125 billion in leading-edge memory manufacturing over the next 20-plus years. These facilities are expected to create approximately 75,000 U.S. jobs, building supply chain resilience, and ensuring U.S. economic and national security that will drive America’s technology leadership.

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市场 & 行业

内存 and storage technology for industrial IoT

微米's innovative portfolio of memory and storage technology helps create "smarter" IoT (internet of things) devices and supports a wide assortment of 行业 with an array of options. 除了, 微米 devices work with a variety of applications like IoT gateways and edge 服务器, 工业自动化, aerospace and defense and video security.

存储

Advancing data center storage

微米's advanced NAND based data center 固态硬盘s deliver extensive capacity and deployment options that enable flexible solution design for a variety of data center workloads. The world’s first 200+ layer data center 固态硬盘, the 微米 6500 ION NVMe™ 固态硬盘, delivers best-in-class performance, 功能30.72TB of storage and enhanced security capabilities.

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Innovation makes new solutions possible

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